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BLF2045 Datasheet, PDF (5/11 Pages) NXP Semiconductors – UHF power LDMOS transistor
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Philips Semiconductors
UHF power LDMOS transistor
Preliminary specification
BLF2045
0
dim
(dBc)
-20
d3
-40
d5
d7
-60
0
10
20
30
40
50
PL (PEP) (W)
VDS = 26 V; IDQ = 180 mA; Th ≤ 25 °C;
f1 = 2000 MHz; f2 = 2000.1 MHz..
Fig.4 Intermodulation distortion as a function of
peak envelope load power; typical values.
0
d3
(dBc)
-20
-40
(1)
-60
0
(3)
(2)
10
20
30
40
50
PL (PEP) (W)
(1) IDQ = 140mA (2) IDQ = 180mA (3) IDQ = 220mA
VDS = 26 V;Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz.
Fig.5 Intermodulation distortion as a function of
peak envelope load power; typical values.
5
zi
(Ω)
4
3
xi
2
1
0
1.8
ri
2
2.2
f (GHz)
VDS = 26 V; IDQ = 180 mA; PL = 45 W; Th ≤ 25 °C.
Fig.6 Input impedance as a function of frequency
(series components); typical values.
6
ZL
(Ω)
4
2
RL
0
-2
XL
-4
-6
1.8
2
2.2
f (GHz)
VDS = 26 V; IDQ = 180 mA; PL = 45 W; Th ≤ 25 °C.
Fig.7 Load impedance as a function of frequency
(series components); typical values.
1999 Dec 06
5
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