BLF1049 Datasheet, PDF (5/12 Pages) NXP Semiconductors – Base station LDMOS transistor

Philips Semiconductors
Base station LDMOS transistor
Product specification
BLF1049
handbook^−,²h⁰alfpage
d3
(dBc)
−30
MLE065
−40
(1)
−50
(2)
(3)
−60
0
50
100
150
PL (PEP) (W)
V_DS = 27 V; I_DQ = 1.1 A; f₁ = 920.0 MHz; f₂ = 920.1 MHz.
(1) T_h = −40 °C.
(2) T_h = 20 °C.
(3) T_h = 80 °C.
Fig.6 Third order intermodulation distortion as a
function of load power at different
temperatures.
handbook^−,³h⁰alfpage
d5
(dBc)
−40
−50
(3)
(1) (2)
MLE066
−60
−70
0
50
100
150
PL (PEP) (W)
V_DS = 27 V; I_DQ = 1.1 A; f₁ = 920.0 MHz; f₂ = 920.1 MHz.
(1) T_h = −40 °C.
(2) T_h = 20 °C.
(3) T_h = 80 °C.
Fig.7 Fifth order intermodulation distortion as a
function of load power at different
temperatures.
handbook^−,⁴h⁰alfpage
d7
(dBc)
−50
−60
MLE067
(3)
(2)
(1)
20
handbook, halfpage
gain
(dB)
(2)
15
(1)
(3)
10
(4)
5
MLE068
40
η_D
(%)
30
20
10
−70
0
50
100
150
PL (PEP) (W)
V_DS = 27 V; I_DQ = 1.1 A; f₁ = 920.0 MHz;
(1) T_h = −40 °C.
(2) T_h = 20 °C.
(3) T_h = 80 °C.
Fig.8 Seventh order intermodulation distortion as
a function of load power at different
temperatures.
0
0
0
50
100
150
PL (PEP) (W)
V_DS = 27 V; f₁ = 920.0 MHz; f₂ = 920.1 MHz.
(1) I_DQ = 1 A.
(2) I_DQ = 1.45 A.
(3) I_DQ = 1 A.
(4) I_DQ = 1.45 A.
Fig.9 Power gain and drain efficiency as functions
of peak envelope load power;
typical values.
2003 May 14
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