BFY50 Datasheet, PDF (5/8 Pages) NXP Semiconductors – NPN medium power transistors

Philips Semiconductors
NPN medium power transistors
Product specification
BFY50; BFY51; BFY52
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V_CEsat
V_CEsat
V_BEsat
C_c
f_T
collector-emitter saturation voltage
BFY50
I_C = 10 mA; I_B = 1 mA
−
I_C = 150 mA; I_B = 15 mA
−
I_C = 500 mA; I_B = 50 mA
−
I_C = 1 A; I_B = 100 mA
−
collector-emitter saturation voltage
BFY51; BFY52
I_C = 10 mA; I_B = 1 mA
−
I_C = 150 mA; I_B = 15 mA
−
I_C = 500 mA; I_B = 50 mA
−
I_C = 1 A; I_B = 100 mA
−
base-emitter saturation voltage
I_C = 10 mA; I_B = 1 mA
−
I_C = 150 mA; I_B = 15 mA
−
I_C = 500 mA; I_B = 50 mA
−
collector capacitance
I_C = 1 A; I_B = 100 mA
−
I_E = i_e = 0; V_CB = 10 V; f = 1 MHz −
transition frequency
BFY50
I_C = 50 mA; V_CE = 10 V;
f = 100 MHz; T_amb = 25 °C
60
BFY51; BFY52
50
−
200 mV
−
200 mV
−
700 mV
−
1
V
−
200 mV
−
350 mV
−
1
V
−
1.6 V
−
1.2 V
−
1.3 V
−
1.5 V
−
2
V
7
12
pF
140 −
−
−
MHz
MHz
Switching times (between 10% and 90% levels)
t_on
turn-on time
t_d
delay time
t_r
rise time
t_off
turn-off time
t_s
storage time
t_f
fall time
I_Con = 150 mA; I_Bon = 15 mA;
−
55
−
ns
I_Boff = −15 mA
−
15
−
ns
−
40
−
ns
−
360 −
ns
−
300 −
ns
−
60
−
ns
1997 Apr 22
5