BFU550X_15 Datasheet, PDF (5/22 Pages) NXP Semiconductors – NPN wideband silicon RF transistor

NXP Semiconductors
Table 9. Characteristics …continued
T_amb = 25 C unless otherwise specified
Symbol Parameter
G_p(max) maximum power gain
s₂₁²
insertion power gain
NF_min minimum noise figure
BFU550X
NPN wideband silicon RF transistor
Conditions
f = 433 MHz; V_CE = 8 V
I_C = 1 mA
I_C = 15 mA
I_C = 25 mA
f = 900 MHz; V_CE = 8 V
I_C = 1 mA
I_C = 15 mA
I_C = 25 mA
f = 1800 MHz; V_CE = 8 V
I_C = 1 mA
I_C = 15 mA
I_C = 25 mA
f = 433 MHz; V_CE = 8 V
I_C = 1 mA
I_C = 15 mA
I_C = 25 mA
f = 900 MHz; V_CE = 8 V
I_C = 1 mA
I_C = 15 mA
I_C = 25 mA
f = 1800 MHz; V_CE = 8 V
I_C = 1 mA
I_C = 15 mA
I_C = 25 mA
f = 433 MHz; V_CE = 8 V; _S = _opt
I_C = 1 mA
I_C = 15 mA
I_C = 25 mA
f = 900 MHz; V_CE = 8 V; _S = _opt
I_C = 1 mA
I_C = 15 mA
I_C = 25 mA
f = 1800 MHz; V_CE = 8 V; _S = _opt
I_C = 1 mA
I_C = 15 mA
I_C = 25 mA
Min Typ Max Unit
[1]
- 15 - dB
- 25.5 - dB
- 26.5 - dB
[1]
- 12 - dB
- 21.5 - dB
- 22 - dB
[1]
- 10 - dB
- 16 - dB
- 15.5 - dB
- 10 - dB
- 23.5 - dB
- 24 - dB
- 8 - dB
- 17.5 - dB
- 18 - dB
- 4.5 - dB
- 12 - dB
- 12 - dB
- 0.6 - dB
- 0.9 - dB
- 1.1 - dB
- 0.75 - dB
- 1 - dB
- 1.2 - dB
- 1 - dB
- 1.1 - dB
- 1.3 - dB
BFU550X
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 5 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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