BF545A Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel silicon junction field-effect transistors

Philips Semiconductors
N-channel silicon junction
field-effect transistors
Product specification
BF545A; BF545B; BF545C
DYNAMIC CHARACTERISTICS
T_amb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
C_is
input capacitance
V_DS = 15 V; V_GS = −10 V; f = 1 MHz
V_DS = 15 V; V_GS = 0; f = 1 MHz
C_rs
reverse transfer capacitance
V_DS = 15 V; V_GS = −10 V; f = 1 MHz
V_DS = 15 V; V_GS = 0; f = 1 MHz
g_is
common source input conductance V_DS = 10 V; I_D = 1 mA; f = 100 MHz
V_DS = 10 V; I_D = 1 mA; f = 450 MHz
g_fs
common source transfer
conductance
V_DS = 10 V; I_D = 1 mA; f = 100 MHz
V_DS = 10 V; I_D = 1 mA; f = 450 MHz
g_rs
common source reverse
conductance
V_DS = 10 V; I_D = 1 mA; f = 100 MHz
V_DS = 10 V; I_D = 1 mA; f = 450 MHz
g_os
common source output
conductance
V_DS = 10 V; I_D = 1 mA; f = 100 MHz
V_DS = 10 V; I_D = 1 mA; f = 450 MHz
TYP.
1.7
3
0.8
0.9
15
300
2
1.8
−6
−40
30
60
UNIT
pF
pF
pF
pF
µS
µS
mS
mS
µS
µS
µS
µS
30
handbook, halfpage
IDSS
(mA)
20
10
MBB467
6
handbook, halfpage
Yfs
(mS)
5
MBB466
0
0
−2
−4
−6
−8
VGSoff (V)
V_DS = 15 V; T_j = 25 °C.
Fig.3 Drain current as a function of gate-source
cut-off voltage; typical values.
4
0
−2
−4
−6
−8
VGSoff (V)
V_DS = 15 V; V_GS = 0; T_j = 25 °C.
Fig.4 Forward transfer admittance as a
function of gate-source cut-off voltage;
typical values.
1996 Jul 29
5