BC817DPN Datasheet, PDF (5/12 Pages) NXP Semiconductors – NPN/PNP general purpose transistor

Philips Semiconductors
NPN/PNP general purpose transistor
Product specification
BC817DPN
10³
handbook, halfpage
VCEsat
(mV)
MBL749
10²
10
10^−1
1
(1)
(2)
(3)
10
10²
10³
IC (mA)
TR1 (NPN) I_C/I_B = 10.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
1200
handbook, halfpage
VBE
(mV)
1000
800
600
400
200
10^−1
1
MBL750
(1)
(2)
(3)
10
10²
10³
IC (mA)
TR1 (NPN) V_CE = 1 V.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
Fig.5 Base-emitter voltage as a function of
collector current; typical values.
2002 Nov 22
5