BAX12 Datasheet, PDF (5/8 Pages) NXP Semiconductors – Controlled avalanche diode

Philips Semiconductors
Controlled avalanche diode
Product specification
BAX12
handbook, full pagewidth
10⁷
IR
(nA)
10⁶
10⁵
10⁴
10³
10²
MBG696
10
0
V_R = 90 V.
Solid line; maximum values. Dotted line; typical values.
100
Tj (^oC)
200
Fig.5 Reverse current as a function of junction temperature.
40
handbook, halfpage
Cd
(pF)
30
20
MGD003
handbook, half age
10³
PRRM
(W)
10²
(1)
10
10
MBG701
0
0
10
20
30
VR (V)
f = 1 MHz; T_j = 25 °C.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1
10^−2
10^−1
1 _{t (ms)} 10
Solid line; rectangular waveform; δ ≤ 0.01.
Dotted line; triangular waveform; δ ≤ 0.02.
(1) Limited by I_RMM = 600 mA.
Fig.7 Maximum permissible repetitive peak
reverse power as a function of the pulse
duration T ≥ 50 ms; T_j = 25 °C.
1996 Sep 17
5