BAW56S Datasheet, PDF (5/12 Pages) NXP Semiconductors – High-speed double diode array

Philips Semiconductors
High-speed double diode array
Product specification
BAW56S
10⁵
IR
(nA)
10⁴
VR = 75 V
10^{3 max}
75 V
MGA884
10²
25 V
typ
typ
10
0
100
Tj ( ^o C)
200
Fig.5 Reverse current as a function of
junction temperature.
handbook², ^.h⁵alfpage
Cd
(pF)
2.0
MBH191
1.5
1.0
0.5
0
0
5
10
15
20
25
VR (V)
f = 1 MHz; T_j = 25 °C.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1997 Oct 21
5