74HC_HCT3G34_15 Datasheet, PDF (5/14 Pages) NXP Semiconductors – Triple buffer gate

NXP Semiconductors
74HC3G34; 74HCT3G34
Triple buffer gate
Table 7. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
74HCT3G34
V_IH
HIGH-level input
voltage
V_IL
LOW-level input
voltage
V_OH
HIGH-level output
voltage
V_OL
LOW-level output
voltage
I_I
I_CC
I_CC
C_I
input leakage current
supply current
additional supply
current
input capacitance
V_CC = 4.5 V to 5.5 V
V_CC = 4.5 V to 5.5 V
V_I = V_IH or V_IL
I_O = 20 A; V_CC = 4.5 V
I_O = 4.0 mA; V_CC = 4.5 V
V_I = V_IH or V_IL
I_O = 20 A; V_CC = 4.5 V
I_O = 4.0 mA; V_CC = 4.5 V
V_I = V_CC or GND; V_CC = 5.5 V
V_I = V_CC or GND; I_O = 0 A;
V_CC = 5.5 V
per input; V_CC = 4.5 V to 5.5 V;
V_I = V_CC  2.1 V; I_O = 0 A
[1] All typical values are measured at T_amb = 25 C.
40 C to +85 C
Min Typ^[1] Max
2.0 1.6
-
-
1.2 0.8
4.4 4.5
-
4.13 4.32 -
-
0 0.1
- 0.15 0.33
-
- 1.0
-
-
10
-
- 375
-
1.5
-
40 C to +125 C Unit
Min
Max
2.0
-
V
-
0.8 V
4.4
-
V
3.7
-
V
-
0.1 V
-
0.4 V
-
1.0 A
-
20
A
-
410 A
-
-
pF
11. Dynamic characteristics
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6.
Symbol Parameter
Conditions
40 C to +85 C
Min Typ^[1] Max
74HC3G34
t_pd
propagation delay nA to nY; see Figure 5
V_CC = 2.0 V
V_CC = 4.5 V
V_CC = 6.0 V
t_t
transition time nY; see Figure 5
V_CC = 2.0 V
V_CC = 4.5 V
V_CC = 6.0 V
C_PD
power dissipation V_I = GND to V_CC
capacitance
[2]
-
-
-
[3]
-
-
-
[4]
-
29
95
9
19
8
16
18
95
6
19
5
16
10
-
40 C to +125 C Unit
Min
Max
-
125 ns
-
25 ns
-
20 ns
-
125 ns
-
25 ns
-
20 ns
-
-
pF
74HC_HCT3G34
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 11 December 2013
© NXP B.V. 2013. All rights reserved.
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