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74HC_HCT3G04_15 Datasheet, PDF (5/14 Pages) NXP Semiconductors – Inverter
◁
NXP Semiconductors
74HC3G04; 74HCT3G04
Inverter
Table 7. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb = 25 C.
Symbol Parameter Conditions
25 C
40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min
Max
CI
input
capacitance
- 1.5 -
-
-
-
-
pF
74HCT3G04
VIH
HIGH-level VCC = 4.5 V to 5.5 V
input voltage
2.0 1.6 -
2.0
-
2.0
-
V
VIL
LOW-level VCC = 4.5 V to 5.5 V
input voltage
- 1.2 0.8
-
0.8
-
0.8 V
VOH
HIGH-level VI = VIH or VIL
output voltage IO = 20 A; VCC = 4.5 V
4.4 4.5
-
4.4
-
4.4
IO = 4.0 mA; VCC = 4.5 V 4.18 4.32 -
4.13
-
3.7
VOL
LOW-level
VI = VIH or VIL
output voltage IO = 20 A; VCC = 4.5 V
-
0 0.1
-
0.1
-
IO = 4.0 mA; VCC = 4.5 V
- 0.15 0.26
-
0.33
-
II
input leakage VI = VCC or GND; VCC = 5.5 V -
- 0.1
-
1.0
-
current
-
V
-
V
0.1 V
0.4 V
1.0 A
ICC
supply current per input pin; VCC = 5.5 V;
-
- 1.0
-
10
-
VI = VCC or GND; IO = 0 A;
ICC
additional
per input;
supply current VCC = 4.5 V to 5.5 V;
VI = VCC  2.1 V; IO = 0 A
-
- 300
-
375
-
CI
input
capacitance
- 1.5 -
-
-
-
20 A
410 A
-
pF
11. Dynamic characteristics
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); all typical values are measured at Tamb = 25 C; for test circuit see Figure 7.
Symbol Parameter Conditions
25 C
40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min
Max
74HC3G04
tpd
propagation nA to nY; see Figure 6 [1]
delay
VCC = 2.0 V
-
22 75
-
90
-
110 ns
VCC = 4.5 V
-
8
15
-
18
-
22 ns
VCC = 6.0 V
-
6
13
-
16
-
20 ns
tt
transition see Figure 6
time
VCC = 2.0 V
[2]
-
18 75
-
95
-
125 ns
VCC = 4.5 V
-
6
15
-
19
-
25 ns
VCC = 6.0 V
-
5
13
-
16
-
20 ns
CPD
power
VI = GND to VCC
dissipation
capacitance
[3] -
9
-
-
-
-
-
pF
74HC_HCT3G04
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 2 October 2013
© NXP B.V. 2013. All rights reserved.
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