74HC_HCT2G14_15 Datasheet, PDF (5/21 Pages) NXP Semiconductors – Dual inverting Schmitt trigger

NXP Semiconductors
74HC2G14; 74HCT2G14
Dual inverting Schmitt trigger
11. Static characteristics
Table 7. Static characteristics for 74HC2G14
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
T_amb = 25 C
V_OH
HIGH-level output voltage
V_I = V_T+ or V_T
I_O = 20 A; V_CC = 2.0 V
I_O = 20 A; V_CC = 4.5 V
I_O = 20 A; V_CC = 6.0 V
I_O = 4.0 mA; V_CC = 4.5 V
I_O = 5.2 mA; V_CC = 6.0 V
V_OL
LOW-level output voltage
V_I = V_T+ or V_T
I_O = 20 A; V_CC = 2.0 V
I_O = 20 A; V_CC = 4.5 V
1.9
4.4
5.9
4.18
5.68
-
-
I_O = 20 A; V_CC = 6.0 V
-
I_O = 4.0 mA; V_CC = 4.5 V
-
I_O = 5.2 mA; V_CC = 6.0 V
-
I_I
input leakage current
V_I = GND or V_CC; V_CC = 6.0 V
-
I_CC
supply current
V_I = GND or V_CC; I_O = 0 A;
-
V_CC = 6.0 V
C_I
input capacitance
-
T_amb = 40 C to +85 C
V_OH
HIGH-level output voltage
V_I = V_T+ or V_T
I_O = 20 A; V_CC = 2.0 V
I_O = 20 A; V_CC = 4.5 V
I_O = 20 A; V_CC = 6.0 V
I_O = 4.0 mA; V_CC = 4.5 V
I_O = 5.2 mA; V_CC = 6.0 V;
1.9
4.4
5.9
4.13
5.63
V_OL
LOW-level output voltage
V_I = V_T+ or V_T
I_O = 20 A; V_CC = 2.0 V
-
I_O = 20 A; V_CC = 4.5 V
-
I_O = 20 A; V_CC = 6.0 V
-
I_O = 4.0 mA; V_CC = 4.5 V
-
I_O = 5.2 mA; V_CC = 6.0 V
-
I_I
input leakage current
V_I = GND or V_CC; V_CC = 6.0 V
-
I_CC
supply current
V_I = GND or V_CC; I_O = 0 A;
-
V_CC = 6.0 V
Typ
2.0
4.5
6.0
4.32
5.81
0
0
0
0.15
0.16
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-
-
0.1
0.1
0.1
0.26
0.26
0.1
1.0
-
-
-
-
-
-
0.1
0.1
0.1
0.33
0.33
1.0
10.0
Unit
V
V
V
V
V
V
V
V
V
V
A
A
pF
V
V
V
V
V
V
V
V
V
V
A
A
74HC_HCT2G14
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 14 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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