74HC1GU04 Datasheet, PDF (5/16 Pages) NXP Semiconductors – Inverter

Philips Semiconductors
Inverter
Product specification
74HC1GU04
DC CHARACTERISTICS FOR THE 74HC1GU04
Over recommended operating conditions. Voltage are referenced to GND (ground = 0 V).
TEST CONDITIONS
T_amb (°C)
SYMBOL
PARAMETER
OTHER
−40 to +85
V_CC (V) _{MIN. TYP.(1) MAX.}
−40 to +125
MIN. MAX.
V_IH
HIGH-level input
voltage
2.0
1.7 1.4
−
4.5
3.6 2.6
−
1.7
−
3.6
−
6.0
4.8 3.4
−
4.8
−
V_IL
LOW-level input voltage
2.0
−
0.6
0.3
−
0.3
4.5
−
1.9
0.9
−
0.9
6.0
−
2.6
1.2
−
1.2
V_OH
HIGH-level output
V_I = V_IH or V_IL, 2.0
1.8 2.0
−
voltage; all outputs
−I_O = 20 µA
4.5
4.0 4.5
−
1.8
−
4.0
−
6.0
5.5 6.0
−
5.5
−
V_OH
HIGH-level output
voltage; standard
outputs
V_I = V_IH or V_IL, 4.5
−I_O = 2.0 mA
V_I = V_IH or V_IL, 6.0
−I_O = 2.6 mA
4.13 4.32 −
5.63 5.81 −
3.7
−
5.2
−
V_OL
LOW-level output
V_I = V_IH or V_IL, 2.0
−
0
0.2
−
0.2
voltage; all outputs
I_O = 20 µA
4.5
−
0
0.5
−
0.5
6.0
−
0
0.5
−
0.5
V_OL
LOW-level output
voltage; standard
outputs
V_I = V_IH or V_IL, 4.5
−
0.15 0.33 −
0.4
I_O = 2.0 mA
V_I = V_IH or V_IL, 6.0
−
0.16 0.33 −
0.4
I_O = 2.6 mA
I_I
input leakage current V_I = V_CC or GND 6.0
−
−
1.0
−
1.0
I_CC
quiescent supply
current
V_I = V_CC or GND, 6.0
−
−
10
−
20
I_O = 0
UNIT
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
Note
1. All typical values are measured at T_amb = 25 °C.
1998 Nov 18
5