|
74HC1G02 Datasheet, PDF (5/16 Pages) NXP Semiconductors – 2-input NOR gate | |||
|
◁ |
Philips Semiconductors
2-input NOR gate
Product speciï¬cation
74HC1G02; 74HCT1G02
DC CHARACTERISTICS
Family 74HC1G
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
Tamb (°C)
SYMBOL
PARAMETER
OTHER
â40 to +85
VCC (V) MIN. TYP.(1) MAX.
â40 to +125
MIN. MAX.
VIH
HIGH-level input voltage
2.0
1.5
1.2
â
4.5
3.15 2.4
â
6.0
4.2
3.2
â
1.5
â
3.15 â
4.2
â
VIL
LOW-level input voltage
2.0
â
0.8
0.5
â
0.5
4.5
â
2.1
1.35 â
1.35
6.0
â
2.8
1.8
â
1.8
VOH
HIGH-level output
voltage
VI = VIH or VIL: 2.0
1.9
2.0
â
IO = â20 µA
1.9
â
VI = VIH or VIL: 4.5
4.4
4.5
â
IO = â20 µA
4.4
â
VI = VIH or VIL: 6.0
5.9
6.0
â
IO = â20 µA
5.9
â
VI = VIH or VIL; 4.5
IO = â2.0 mA
4.13 4.32 â
3.7
â
VI = VIH or VIL; 6.0
IO = â2.6 mA
5.63 5.81 â
5.2
â
VOL
LOW-level output
voltage
VI = VIH or VIL; 2.0
â
0
0.1
â
0.1
IO = 20 µA
VI = VIH or VIL: 4.5
â
0
0.1
â
0.1
IO = â20 µA
VI = VIH or VIL: 6.0
â
0
0.1
â
0.1
IO = â20 µA
VI = VIH or VIL; 4.5
â
0.15 0.33 â
0.4
IO = 2.0 mA
VI = VIH or VIL; 6.0
â
0.16 0.33 â
0.4
IO = 2.6 mA
ILI
input leakage current VI = VCC or GND 6.0
â
â
1.0
â
1.0
ICC
quiescent supply
current
VI = VCC or GND; 6.0
â
â
10
â
20
IO = 0
UNIT
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
Note
1. All typical values are measured at Tamb = 25 °C.
2002 May 17
5
|
▷ |