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XC7SET125 Datasheet, PDF (4/14 Pages) NXP Semiconductors – High-spped Si-gate CMOS devices, one non-inverting buffer/line driver with 3-state output
NXP Semiconductors
XC7SET125
Bus buffer/line driver; 3-state
9. Recommended operating conditions
Table 6. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
VCC
VI
VO
Tamb
∆t/∆V
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
10. Static characteristics
Min
Typ
Max
Unit
4.5
5.0
5.5
V
0
-
5.5
V
0
-
VCC
V
−40
+25
+125
°C
-
-
20
ns/V
Table 7. Static characteristics
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions
VIH
VIL
VOH
VOL
IOZ
II
ICC
∆ICC
CI
HIGH-level VCC = 4.5 V to 5.5 V
input voltage
LOW-level VCC = 4.5 V to 5.5 V
input voltage
HIGH-level VI = VIH or VIL; VCC = 4.5 V
output voltage IO = −50 µA
IO = −8.0 mA
LOW-level
VI = VIH or VIL; VCC = 4.5 V
output voltage IO = 50 µA
IO = 8.0 mA
OFF-state
VI = VCC or GND;
output current VCC = 5.5 V
input leakage VI = 5.5 V or GND;
current
VCC = 0 V to 5.5 V
supply current VI = VCC or GND; IO = 0 A;
VCC = 5.5 V
additional
per input pin; VI = 3.4 V;
supply current other inputs at VCC or GND;
IO = 0 A; VCC = 5.5 V
input
capacitance
25 °C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min
Max
Min
Max
2.0 -
-
2.0
-
2.0
-
V
-
- 0.8
-
0.8
-
0.8 V
4.4 4.5 -
4.4
-
4.4
-
V
3.94 -
-
3.8
-
3.70
-
V
-
0 0.1
-
0.1
-
0.1 V
-
- 0.36 -
0.44
-
0.55 V
-
- 0.25 -
2.5
-
10 µA
-
- 0.1
-
1.0
-
2.0 µA
-
- 1.0
-
10
-
40 µA
-
- 1.35 -
1.5
-
1.5 mA
- 1.5 10
-
10
-
10 pF
XC7SET125_1
Product data sheet
Rev. 01 — 4 September 2009
© NXP B.V. 2009. All rights reserved.
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