TDA8011T Datasheet, PDF (4/12 Pages) NXP Semiconductors – IF amplifier for satellite TV receivers

Philips Semiconductors
IF amplifier for satellite TV receivers
Product specification
TDA8011T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CC
V_(max)
I_source(max)
t_sc(max)
T_stg
T_j
T_amb
supply voltage
maximum voltage on all pins
maximum output source current
maximum short-circuit time on outputs
storage temperature
junction temperature
operating ambient temperature
MIN.
−0.3
−0.3
−
−
−55
−
−10
MAX.
6.0
V_CC
10
10
+150
+150
+80
UNIT
V
V
mA
s
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R_{th j-a}
PARAMETER
thermal resistance from junction to ambient in free air
VALUE
160
UNIT
K/W
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe it is
desirable to take normal precautions appropriate to handling MOS devices.
CHARACTERISTICS
V_CC = 5 V; f_i = 70, 480 and 610 MHz; T_amb = 25 °C; measured in application circuit of Fig.6; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
Supply
I_CC
IF amplifier
G_v(max)
G_v(min)
∆G
V_i
V_I(DC)
V_o
V_O(DC)
F
F_(min)
IM3
R_i(diff)
C_i(diff)
R_o(SE)
supply current
27
maximum voltage gain
minimum voltage gain
tilt
V_AGC = 0.9V_CC; note 1 25
V_AGC = 0.1V_CC; note 1 −
∆f_i = 20 MHz; note 2
−
input voltage level
−
DC input voltage level
−
output voltage level
−
DC output voltage level
−
noise figure
unmatched configuration; −
note 3
minimum noise figure
note 4
−
third-order intermodulation
note 5
−
distance
differential input resistance note 6
−
differential input capacitance note 6
−
single-ended output resistance
−
35
45
−
−
−
−21
0.4
−
−
96
2.5
−
−
85
2.2
−
−
15
−
11
40
−
4
−
0.75
−
50
−
mA
dB
dB
dB
dBµV
V
dBµV
V
dB
dB
dB
kΩ
pF
Ω
February 1995
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