SA57000-XX Datasheet, PDF (4/8 Pages) NXP Semiconductors – CapFREEE 150 mA, low-noise, low dropout regulator with thermal protection

Philips Semiconductors
CapFREE™ 150 mA, low-noise, low dropout regulator
with thermal protection
Product data
SA57000-XX
CHARACTERISTICS
V_IN = V_OUT(nom) + 0.5 V. (Note 1.)
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V_IN
input voltage
output voltage accuracy ²
I_LIM
current limit
I_Q
ground pin current
dropout voltage ³
∆V_LNR
∆V_LDR
e_n
Shutdown
line regulation
load regulation
output voltage noise
I_OUT = 1 mA
T_amb = +25 °C
–40 °C ≤ T_amb ≤ +85 °C
I_OUT = 1 mA to 150 mA
I_OUT = 1 mA
I_OUT = 50 mA
I_OUT = 150 mA
V_IN = (V_OUT + 0.1 V) to 5.5 V; I_OUT = 20 mA
I_OUT = 1 mA to 150 mA
f = 10 Hz to 100 kHz, C_OUT = 10 µF
V_OUT(nom)
–
–2.0
160
–
–
–
–
–
–
–
–
±1
–
300
85
1
55
165
–
0.01
30
5.5
V
–
%
2.0
%
–
mA
150
µA
–
mV
120
mV
–
mV
0.1
%/V
0.02
%/mA
–
µV_RMS
V_IH
PWRON input threshold
(HIGH ON-state)
V_IN → V_OUT(nom) → 5.5 V
0.7 × V_IN
–
–
V
V_IL
PWRON input threshold
(HIGH ON-state)
V_IN → V_OUT(nom) → 5.5 V
–
–
0.3 × V_IN
V
I_PWRON
PWRON input bias current
I_Q(SHDN) shutdown supply current
t_PWRON
power-on start-up time ⁴
Thermal protection (Note 2)
V_PWRON = V_IN
T_amb = +25 °C
T_amb = +85 °C
V_OUT = 0 V
T_amb = +25 °C
T_amb = +85 °C
I_OUT = 1 mA, C_OUT = 100 nF
T_amb = +25 °C
T_amb = –40 to +85 °C
–
0.01
1
µA
–
0.05
–
µA
–
0.05
1
µA
–
0.2
1
µA
–
25
100
µs
–
35
200
µs
T_SHDN
thermal shut-down temperature
∆T_SHDN
thermal shut-down hysteresis
PWROK output (power and temperature OK) (Note 2)
–
144
–
°C
–
13
–
°C
PWROK trip temperature
–
127
–
°C
PWROK trip temperature
hysteresis
–
12
–
°C
PWROK trip as percentage of
V_OUT(nom)
–3.5
–6
–8
%
PWROK hysteresis as
percentage of V_OUT(nom)
–
2
–
%
PWROK output (when tripped)
I_SINK = 0.5 mA
–
0.1
0.4
V
NOTES:
1. Limits are production tested at T_amb = +25 °C. All devices are 100% production tested at 25 °C. Limits over the operating tempreature are
guaranteed by design.
2. Accuracy ±2 °C over temperature range guaranteed by design and characterization.
3. The dropout voltage is defined as V_IN – V_OUT, where V_OUT is 100 mV below the value of V_OUT for V_IN = V_OUT + 0.5 V..
4. Time needed for V_OUT to reach 95% of V_OUT(nom).
2001 Aug 27
4