SA2420 Datasheet, PDF (4/16 Pages) NXP Semiconductors – Low voltage RF transceiver . 2.45GHz

Philips Semiconductors
Low voltage RF transceiver — 2.45 GHz
Product specification
SA2420
AC ELECTRICAL CHARACTERISTICS
V_CC = +3V, T_A = 25°C; LO_IN = -10dBm @ 2.1GHz; f_RF = 2.45GHz; unless otherwise stated.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
Low Noise Amplifier (In = Pin 2; Out = 23)
S₂₁
∆S₂₁/∆T
∆S₂₁/∆V_CC
S₁₂
S₁₁
S₂₂
Amplifier gain
Gain temperature sensitivity
Gain V_CC drift
Amplifier reverse isolation
Amplifier input match¹
Amplifier output match¹
ISO
Isolation: LO₁ to LNA_IN
LNA gain = Hi
LNA gain = Hi
LNA gain = Hi
LNA gain = Hi
LNA gain = Hi
LNA gain = Hi
LO mode = Hi,
LNA gain = Hi
P_-1dB
IP3
Amplifier input 1dB gain compression
Amplifier input third order intercept
LNA gain = Hi
f₁ - f₂ = 1MHz,
LNA gain = Hi
NF
Amplifier noise figure (50Ω)
LNA gain = Hi
LNA High Overload Mode
S₂₁
∆S₂₁/∆T
∆S₂₁/∆V_CC
S₁₂
S₁₁
S₂₂
Amplifier gain
Gain temperature sensitivity
Gain V_CC drift
Amplifier reverse isolation
Amplifier input match¹
Amplifier output match¹
ISO
Isolation: LO₁ to LNA_IN
LNA gain = Low
LNA gain = Low
LNA gain = Low
LNA gain = Low
LNA gain = Low
LNA gain = Low
LO mode = Hi,
LNA gain = Low
P_-1dB
IP3
Amplifier input 1dB gain compression
Amplifier input third order intercept
LNA gain = Low
f₁ - f₂ = 1MHz,
LNA gain = Low
NF
Amplifier noise figure (50Ω)
LNA gain = Low
Rx Mixer (RF = Pin 19, IF = Pins 5 and 6, LO = Pin 10 or 12, P_LO = -10dBm)
PG_C
Power conversion gain into 50Ω :
matched to 50W using external balun
circuitry.
f_S = 2.45GHz,
f_LO = 2.1GHz,
f_IF = 350MHz
∆G_C/∆T Gain temperature drift
∆G_C/∆V_CC Gain V_CC drift
S_11–RF Input match at RF (2.45GHz)¹
NF_M
SSB noise figure (2.45GHz) (50Ω)
P_-1dB Mixer input 1dB gain compression
IP3
Input third order intercept
f₁ - f₂ = 1MHz
f_RF
RF frequency range³
2.4
f_IF
IF frequency range³
300
-4σ
12.7
2.3
–14.0
7.9
10.2
–11.4
1.7
LIMITS
TYP
14.0
-0.002
0.3
-22
-8
-8
-45
-15
-3
2.5
-13.3
-0.01
0.3
-16
-8
-8
-45
+6
17
17
8.5
-0.016
0.34
-15
10.9
-10.3
2.8
2.45
350
+4σ
15.3
2.7
–12.0
9.1
11.6
–9.2
3.9
MAX
2.5
400
UNITS
dB
dB/°C
dB/V
dB
dB
dB
dB
dBm
dBm
dB
dB
dB/°C
dB/V
dB
dB
dB
dB
dBm
dBm
dB
dB
dB/°C
dB/V
dB
dB
dBm
dBm
GHz
MHz
1997 May 23
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