RB751_15 Datasheet, PDF (4/10 Pages) NXP Semiconductors – Schottky barrier single diodes

NXP Semiconductors
RB751 series
Schottky barrier single diodes
10²
I_F
(mA)
10
(1) (2) (3) (4)
1
mlc361
10^−1
10^−2
0
0.2
0.4
0.6
0.8
1
V_F (V)
(1) T_amb = 125 °C
(2) T_amb = 85 °C
(3) T_amb = 25 °C
(4) T_amb = −40 °C
Fig 1. Forward current as a function of forward
voltage; typical values
5
C_d
(pF)
4
10³
I_R
(µA)
10²
mlc362
(1)
10
(2)
1
10^−1
10^−2
0
10
(1) T_amb = 125 °C
(2) T_amb = 85 °C
(3) T_amb = 25 °C
(3)
20
30 _{VR (V)} 40
Fig 2. Reverse current as a function of reverse
voltage; typical values
mlc363
3
2
1
0
0
10
20
30
40
VR (V)
f = 1 MHz; T_amb = 25 °C
Fig 3. Diode capacitance as a function of reverse voltage; typical values
RB751_SER_1
Product data sheet
Rev. 01 — 21 May 2007
© NXP B.V. 2007. All rights reserved.
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