PZ1418B15U Datasheet, PDF (4/12 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
PZ1418B15U
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-mb}
R_{th mb-h}
thermal resistance from junction to mounting-base T_j = 75 °C
thermal resistance from mounting-base to heatsink T_j = 75 °C; note 1
Note
1. See “Mounting recommendations in the General part of handbook SC15”.
MAX.
4
0.2
UNIT
K/W
K/W
CHARACTERISTICS
T_mb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_CES
collector cut-off current
I_EBO
emitter cut-off current
CONDITIONS
V_CB = 40 V; I_E = 0
V_CB = 30 V; I_E = 0
V_CE = 35 V; R_BE = 0
V_EB = 1.5 V; I_C = 0
MAX.
5
2.5
25
100
UNIT
mA
mA
mA
µA
APPLICATION INFORMATION
Microwave performance up to T_mb = 25 °C in a common base class B wideband amplifier.
MODE OF
f
V_CC
P_L
G_p
η_C
OPERATION
(GHz)
(V)
(W)
(dB)
(%)
Z_i; Z_L
(Ω)
Class-B
handbook, full pagewidth
1.4 to 1.8
28
≥12.5
≥7
≥38
see Figs 6 and 7
typ. 15
typ. 7.8
typ. 45
,,,,,,,,,,,,,,,,,,,,,,,,,, _input
,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, ^{50 Ω}
5
0.5
4.5
14.5
7.5
1
output
9
50 Ω
4.5
100 pF
(ATC)
1
2.5
15
24
5
30
13.5
2 4.5 2
30
6
MSA110
Dimensions in mm.
Substrate: Epsilam printed circuit board.
Thickness: 0.635 mm.
Permittivity: ε_r = 10.
Fig.3 Wideband test circuit board for 1.4 to 1.8 GHz operation.
1997 Feb 19
4