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| PSMN130-200D Datasheet, PDF (4/12 Pages) NXP Semiconductors – N-channel TrenchMOS transistor | |||
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Philips Semiconductors
Product speciï¬cation
N-channel TrenchMOS(TM) transistor
PSMN130-200D
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IS
Continuous source current
(body diode)
ISM
Pulsed source current (body
diode)
VSD
Diode forward voltage
IF = 25 A; VGS = 0 V
trr
Reverse recovery time
IF = 20 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge VGS = -10 V; VR = 25 V
MIN. TYP. MAX. UNIT
-
- 20 A
-
- 80 A
- 0.95 1.2 V
- 124 - ns
- 0.74 - µC
August 1999
4
Rev 1.000
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