PN4391 Datasheet, PDF (4/6 Pages) NXP Semiconductors – N-channel silicon field-effect transistors

Philips Semiconductors
N-channel silicon field-effect transistors
Product specification
PN4391 to 4393
DYNAMIC CHARACTERISTICS
T_j = 25 °C unless otherwise specified
Drain-source on-resistance
V_DS = 0 V; V_GS = 0; f = 1 kHz; T_a = 25 °C
Input capacitance
V_DS = 20 V; V_GS = 0; f = 1 MHz; T_a = 25 °C
Feedback capacitance
V_DS = 0; −V_GS = 12 V
V_DS = 0; −V_GS = 7 V
V_DS = 0; −V_GS = 5 V
Switching times
f = 1 MHz
test conditions
V_DD = 10 V; V_GS = 0 to V_{GS off}
Rise time
Turn-on time
Fall time
Turn-off time
PN4391 PN4392 PN4393
R_{DS on} max.
C_iss
max.
C_rss
max.
C_rss
max.
C_rss
max.
30
60
100 Ω
16
16
16 pF
5
pF
5
pF
5 pF
I_D
−V_{GS off}
R_L
t_r
t_on
t_f
t_off
=
=
=
max.
max.
max.
max.
12
6.0
3.0 mA
12
7.0
5.0 V
750
1550
3150 Ω
5
5
5 ns
15
15
15 ns
15
20
30 ns
20
35
50 ns
ok, halfpage
VDD
10 nF
50 Ω
10 µF
50 Ω
1 µF
RL
DUT
SAMPLING
SCOPE
50 Ω
MBK289
VGS = 0 V
Vi
−VGS _off
10%
90%
90%
Vo
10%
toff
tf
ton
tr
MBK288
Fig.2 Switching times test circuit.
April 1989
Fig.3 Input and output waveforms.
4