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| PMV50UPE_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – 20 V, single P-channel Trench MOSFET | |||
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NXP Semiconductors
PMV50UPE
20 V, single P-channel Trench MOSFET
-102
ID
(A)
-10
Limit RDSon = VDS/ID
017aaa691
-1
-10-1
DC; Tsp = 25 °C
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
tp = 1 ms
tp = 10 ms
tp = 100 ms
-10-2
-10-1
-1
IDM = single pulse
-10
-102
VDS (V)
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1]
-
218 250 K/W
[2]
-
114 130 K/W
[3]
-
80
92
K/W
-
30
35
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ⤠5 s.
PMV50UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 July 2012
© NXP B.V. 2012. All rights reserved
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