PMN48XP_15 Datasheet, PDF (4/15 Pages) NXP Semiconductors – 20 V, 4.1 A P-channel Trench MOSFET

NXP Semiconductors
–10²
I_D
(A)
–10
Limit R_DSon = V_DS/I_D
–1
–10^–1
–10^–2
–10^–1
–1
PMN48XP
20 V, 4.1 A P-channel Trench MOSFET
017aaa202
(1)
(2)
(3)
(4)
(5)
(6)
–10
V_DS (V)
–10²
Fig 3.
I_DM = single pulse
(1) t_p = 100 µs
(2) t_p = 1 ms
(3) t_p = 10 ms
(4) DC; T_sp = 25 °C
(5) t_p = 100 ms
(6) DC; T_amb = 25 °C; drain mounting pad 6 cm²
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
PMN48XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
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