PMEG4010CPAS_15 Datasheet, PDF (4/15 Pages) NXP Semiconductors – 40 V, 1 A low VF dual MEGA Schottky barrier rectifier

NXP Semiconductors
PMEG4010CPAS
40 V, 1 A low VF dual MEGA Schottky barrier rectifier
8. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Per device; one diode loaded
R_th(j-a)
thermal resistance
from junction to
ambient
Conditions
in free air
R_th(j-sp)
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1][2] -
-
250 K/W
[1][3] -
-
130 K/W
[1][4] -
-
70
K/W
[5]
-
-
12
K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P_R are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] _{Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm}²_.
[4] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
[5] Soldering point of cathode tab.
10³
Z_th(j-a)
(K/W)
10²
duty cycle =
1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
10
0.02 0.01
006aac427
0
1
10^{- 3}
10^{- 2}
10^{- 1}
1
FR4 PCB, standard footprint
10
10²
10³
t_p (s)
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG4010CPAS
Product data sheet
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20 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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