PHX4ND40E Datasheet, PDF (4/8 Pages) NXP Semiconductors – PowerMOS transistors FREDFET, Avalanche energy rated

Philips Semiconductors
PowerMOS transistors
FREDFET, Avalanche energy rated
120 ^PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_mb)
ID%
120
Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_mb); conditions: V_GS ≥ 10 V
100 ^{ID, Drain current (Amps)}
10
RDS(ON) ^{= VDS/ID}
1
DC
0.1
PHX2N40
tp = 10 us
100 us
1 ms
10 ms
100 ms
0.01
1
10
100
1000
VDS, Drain-source voltage (Volts)
10000
Fig.3. Safe operating area. T_hs = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
Product specification
PHX4ND40E
10 ^{Zth(j-hs) K/W}
D = 0.5
1 ^0.2
0.1
0.05
0.02
0.1
0.01
PHX1N60
P_D
tp
D = ^tp
T
T
t
0.001
1us 10us 100us 1ms 10ms 100ms 1s 10s
tp / sec
Fig.4. Transient thermal impedance.
Z_{th j-hs} = f(t); parameter D = t_p/T
10 ^{ID, Drain current (Amps)}
Tj = 25 C
8
6
4
2
PHP4N40
10 V
7V
6.5 V
6V
5.5 V
5V
VGS = 4.5 V
0
0
5
10
15
20
25
30
VDS, Drain-Source voltage (Volts)
Fig.5. Typical output characteristics.
I_D = f(V_DS); parameter V_GS
4 ^{RDS(on), Drain-Source on resistance (Ohms)}
4.5 V 5 V 5.5 V 6 V 6.5 V
3
PHP4N40
VGS = 7 V
Tj = 25 C
10 V
2
1
0
0
2
4
6
8
10
ID, Drain current (Amps)
Fig.6. Typical on-state resistance.
R_DS(ON) = f(I_D); parameter V_GS
August 1998
4
Rev 1.100