PHX3N40E Datasheet, PDF (4/8 Pages) NXP Semiconductors – PowerMOS transistors Avalanche energy rated

Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
120 ^PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_hs)
ID%
120
110
Normalised Current Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_hs); conditions: V_GS ≥ 10 V
10 ^{Drain current, ID (Amps)}
RDS(ON) ^{= VDS/ID}
1
DC
0.1
PHX1N40
tp =
10 us
100us
1ms
10ms
100ms
0.01
10
100
Drain-source voltage, VDS (Volts)
1000
Fig.3. Safe operating area. T_hs = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
Product specification
PHX3N40E
Zth j-hs / (K/W)
1E+01
ZTHX43
0.5
1E+00 0.2
0.1
0.05
1E-01 ^0.02
P_D
tp
D
=
tp
T
0
1E-02
1E-07
1E-05
1E-03
t/s
T
t
1E-01
1E+01
Fig.4. Transient thermal impedance.
Z_{th j-hs} = f(t); parameter D = t_p/T
ID, Drain current (Amps)
8
Tj = 25 C
7
PHP2N40
20 V
6
10 V
7V
5
4
6.5 V
6V
3
5.5 V
2
5V
1
VGS = 4.5 V
0
0
5
10
15
20
25
30
VDS, Drain-Source voltage (Volts)
Fig.5. Typical output characteristics.
I_D = f(V_DS); parameter V_GS
Drain-Source on resistance, RDS(ON) (Ohms)
6
5V 5.5 V 6 V
6.5 V
5
PHP2N40
Tj = 25 C
7V
4
10 V
3
VGS = 20 V
2
1
0
0
1
2
3
4
5
6
7
8
Drain current, ID (Amps)
Fig.6. Typical on-state resistance.
R_DS(ON) = f(I_D); parameter V_GS
December 1998
4
Rev 1.200