PHX15N06E Datasheet, PDF (4/7 Pages) NXP Semiconductors – PowerMOS transistor Isolated version of PHP20N06E

Philips Semiconductors
PowerMOS transistor
Product specification
PHX15N06E
45 ^{ID / A}
20 15 10
BUK453-50A
VGS / V = 8
30
7
15
6
5
4
0
0
2
4
6
8
10
VDS / V
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
RDS(ON) / Ohm
0.5
4
5 5.5 6
0.4
4.5
0.3
6.5 7
BUK453-50A
VGS / V =
7.5
8
0.2
0.1
10
0
0
Fig.6.
20
10
20
30
40
ID / A
Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
ID / A
40
Tj / C =
25
30
BUK453-50A
150
20
10
0
0 2 4 6 8 10 12 14 16 18 20
VGS / V
Fig.7. Typical transfer characteristics.
I_D = f(V_GS) ; conditions: V_DS = 25 V; parameter T_j
gfs / S
8
BUK453-50A
7
6
5
4
3
2
1
0
0
10
20
30
40
ID / A
Fig.8. Typical transconductance, T_j = 25 ˚C.
g_fs = f(I_D); conditions: V_DS = 25 V
a
1.5
Normalised RDS(ON) = f(Tj)
1.0
0.5
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.9. Normalised drain-source on-state resistance.
a = R_DS(ON)/R_{DS(ON)25 ˚C} = f(T_j); I_D = 9 A; V_GS = 10 V
VGS(TO) / V
4
3
2
max.
typ.
min.
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.10. Gate threshold voltage.
V_GS(TO) = f(T_j); conditions: I_D = 1 mA; V_DS = V_GS
November 1996
4
Rev 1.000