PHP60N06T Datasheet, PDF (4/8 Pages) NXP Semiconductors – TrenchMOS transistor Standard level FET

Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
PHP60N06T
120 ^PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_mb)
ID%
120
110
100
Normalised Current Derating
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_mb); conditions: V_GS ≥ 10 V
1000
ID/A
100
RDS(ON) =VDS/ID
tp =
1 us
10us
DC
10
100 us
1 ms
10ms
100ms
1
1
10
VDS/V
100
Fig.3. Safe operating area. T_mb = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
10 ^Zth/(K/W)
1
0.5
0.2
0.1
0.1 _0.05
0.02
0.01 0
P_D
tp
D
=
tp
T
T
t
0.001
1E-06
0.0001
0.01
1
100
t/s
Fig.4. Transient thermal impedance.
Z_{th j-mb} = f(t); parameter D = t_p/T
100
16
ID/A
10
80
9
VGS/V =
8.5
8.0
7.5
60
7.0
6.5
40
6.0
20
5.5
5.0
4.5
0
0
2
4 _VDS/V 6
8
10 ^4.0
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
RDS(ON)/mOhm
45
VGS/V =
6
40
6.5
35
7
30
25
20
8
9
10
15
0 10 20 30 40 50 60 70 80 90 100
ID/A
Fig.6. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
December 1997
4
Rev 1.100