PHP34NQ10T Datasheet, PDF (4/12 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
PHP34NQ10T, PHB34NQ10T
PHD34NQ10T
Normalised Power Derating, PD (%)
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
Mounting Base temperature, Tmb (C)
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_mb)
Normalised Current Derating, ID (%)
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100 125 150 175
Mounting Base temperature, Tmb (C)
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_mb); V_GS ≥ 10 V
1000 ^{Peak Pulsed Drain Current, IDM (A)}
RDS(on) = VDS/ ID
100
tp = 10 us
10
1
1
D.C.
100 us
1 ms
10 ms
100 ms
10
100
Drain-Source Voltage, VDS (V)
1000
Fig.3. Safe operating area
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
10 ^{Transient thermal impedance, Zth j-mb (K/W)}
1 D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01 _{single pulse}
P
D
D = tp/T
tp
0.001
1E-06
1E-05
T
1E-04 1E-03 1E-02
Pulse width, tp (s)
1E-01
1E+00
Fig.4. Transient thermal impedance.
Z_{th j-mb} = f(t); parameter D = t_p/T
50 ^{Drain Current, ID (A)}
Tj = 25 C
45
40
35
30
VGS = 10V
8V
6V
25
20
15
10
5
0
0
5.4 V
5.2 V
5V
4.8 V
4.6 V
4.4 V
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Drain-Source Voltage, VDS (V)
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS)
Drain-Source On Resistance, RDS(on) (Ohms)
0.1
5V
5.2 V 5.4 V
0.09 _{4.8 V}
0.08
Tj = 25 C
0.07
0.06
6V
0.05
0.04
8V
0.03
VGS = 10V
0.02
0.01
0
0 5 10 15 20 25 30 35 40 45 50
Drain Current, ID (A)
Fig.6. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D)
August 1999
4
Rev 1.000