PHP14NQ20T Datasheet, PDF (4/10 Pages) NXP Semiconductors – TrenchMOS transistor

Philips Semiconductors
TrenchMOS™ transistor
Product specification
PHP14NQ20T, PHB14NQ20T
120 ^PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_mb)
ID%
120
110
100
Normalised Current Derating
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_mb); conditions: V_GS ≥ 10 V
Peak Pulsed Drain Current, IDM (A)
1000
RDS(on) = VDS/ ID
100
10
D.C.
1
tp = 1 us
10us
100us
1 ms
10 ms
100 ms
0.1
1
10
100
Drain-Source Voltage, VDS (V)
1000
Fig.3. Safe operating area. T_mb = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
Transient thermal impedance, Zth j-a (K/W)
10
1
D = 0.5
0.2
0.1
0.1 _0.05
0.02
single pulse
0.01
1E-06
1E-05
1E-04 1E-03 1E-02 1E-01
Pulse width, tp (s)
1E+00 1E+01
Fig.4. Transient thermal impedance.
Z_{th j-mb} = f(t); parameter D = t_p/T
Drain Current, ID (A)
30
25
20
10V
15V
6.5V 6 V
15
5.5
10
5V
5
VGS=4.5
0
0 1 2 3 4 5 6 7 8 9 10
Drain-Source Voltage, VDS (V)
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
Drain-Source On Resistance, RDS(on) (Ohms)
0.8
4.5V
0.7
5V
0.6
5.5V
0.5
0.4
10V
6V 6.5V
0.3
0.2
VGS =20 V
0.1
0
0
10
20
Drain Current, ID (A)
Fig.6. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
October 1999
4
Rev 1.000