PESD5V0L1USF_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – Low capacitance unidirectional ESD protection diode

NXP Semiconductors
PESD5V0L1USF
Low capacitance unidirectional ESD protection diode
120
I_PP
(%)
80
40
100 % I_PP; 8 μs
001aaa630
e^−t
50 % I_PP; 20 μs
0
0
10
20
30
40
t (μs)
Fig 1. 8/20 s pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
I_PP
100 %
90 %
001aaa631
10 %
t_r = 0.7 ns to 1 ns
t
30 ns
60 ns
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
6. Characteristics
Table 8. Characteristics
T_amb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
V_RWM
reverse standoff
voltage
-
-
5
V
I_RM
reverse leakage current V_RWM = 5 V
-
1
100 nA
V_BR
breakdown voltage
I_R = 1 mA
6
7
8
V
C_d
diode capacitance
f = 1 MHz; V_R = 0 V
9
V_CL
clamping voltage
I_PP = 1 A
[1][2] _-
r_dyn
dynamic resistance
I_R = 10 A
[3] _-
12
15
pF
-
10.5 V
1.2 -

[1] Device stressed with 8/20 s exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321.
[2] Measured from pin 1 to pin 2.
[3] Non-repetitive current pulse, Transmission Line Pulse (TLP) t_p = 100 ns; square pulse;
ANS/IESD STM5-1-2008.
PESD5V0L1USF
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 July 2012
© NXP B.V. 2012. All rights reserved.
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