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PDTA124ES Datasheet, PDF (4/8 Pages) NXP Semiconductors – PNP resistor-equipped transistor | |||
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Philips Semiconductors
PNP resistor-equipped transistor
Product speciï¬cation
PDTA124ES
103
handbook, halfpage
hFE
102
10
MBK790
(1)
(2)
(3)
â1
handbook, halfpage
VCEsat
(V)
â10â1
MBK789
(1)
(2)
(3)
1
â10â1
â1
â10
â102
IC (mA)
VCE = â5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = â40 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
â10ââ210â1
â1
â10
â102
IC (mA)
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = â40 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
â10
handbook, halfpage
Vi(off)
(V)
(1)
â1
(2)
(3)
MBK792
â102
handbook, halfpage
Vi(on)
(V)
â10
â1
MBK791
(1)
(2)
(3)
â10ââ110â2
â10â1
â1
â10
IC (mA)
VCE = â5 V.
(1) Tamb = â40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.5 Input-off voltage as a function of collector
current; typical values.
â10â1
â10â1
â1
â10
â102
IC (mA)
VCE = â0.3 V.
(1) Tamb = â40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.6 Input-on voltage as a function of collector
current; typical values.
1998 May 20
4
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