PBSS4140U_15 Datasheet, PDF (4/8 Pages) NXP Semiconductors – 40 V low VCEsat NPN transistor

NXP Semiconductors
40 V low V_CEsat NPN transistor
Product data sheet
PBSS4140U
1000
handbook, halfpage
hFE
800
600
400
200
MLD660
(1)
(2)
(3)
010_−1
1
V_CE = 5 V.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
10
10²
10³
10⁴
IC (mA)
Fig.2 DC current gain as a function of collector
current; typical values.
10
handbook, halfpage
VBE
(V)
1
MLD656
(1)
(2)
(3)
10^−1
10^−1
1
V_CE = 5 V.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
10
10²
10³
10⁴
IC (mA)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
10³
handbook, halfpage
VCEsat
(mV)
10²
MLD657
(1)
10²
handbook, halfpage
RCEsat
(Ω)
10
MLD658
(3)
(2)
10
1
1
10
I_C/I_B = 10.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
10²
10³
10⁴
IC (mA)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
(1)
(2)
1
(3)
10^−₁¹_0−1
1
I_C/I_B = 10.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
10
10^−2
10^−3
10^−4
IC (mA)
Fig.5 Equivalent on-resistance as a function of
collector current; typical values.
2001 Jul 13
4