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PBSS4032PT-215 Datasheet, PDF (4/14 Pages) NXP Semiconductors – 30 V, 2.4 A PNP low VCEsat (BISS) transistor Rev. 01 — 18 December 2009
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NXP Semiconductors
PBSS4032PT
30 V, 2.4 A PNP low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max Unit
[1] -
-
320 K/W
[2] -
-
190 K/W
[3] -
-
115 K/W
-
-
62
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
103
Zth(j-a)
(K/W)
102
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aab955
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4032PT_1
Product data sheet
Rev. 01 — 18 December 2009
© NXP B.V. 2009. All rights reserved.
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