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OM2070 Datasheet, PDF (4/8 Pages) NXP Semiconductors – Wideband amplifier module
Philips Semiconductors
Wideband amplifier module
Product specification
OM2070
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
Tamb
Tstg
VB
PIM
ambient operating temperature
storage temperature
DC supply voltage
peak incident powers on pins 1 and 8
MIN.
−20
−40
−
−
MAX.
+70
+125
15
100
UNIT
°C
°C
V
mW
CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Measuring conditions
Tamb
VB
ZS
ZL
Z0
f
ambient operating temperature
DC supply voltage
source impedance
load impedance
characteristic impedance of
HF connections
frequency range
Performance
IB
GT
∆GT
VSWRin
VSWRout
S122
Vo(rms)
F
supply current
transducer gain = S212
flatness of frequency response
individual maximum VSWR
individual maximum VSWR
back attenuation
output voltage (RMS value)
noise figure
input; note 1
output; note 1
f = 100 MHz
f = 860 MHz
dim = −60 dB;
3rd order intermodulation (3-tone)
VHF
UHF
Operating conditions
Tamb
VB
f
ZS
ZL
ambient operating temperature
DC supply voltage
frequency range
source impedance
load impedance
Note
1. Highest value (for sample) occurring in the frequency range.
MIN. TYP. MAX. UNIT
−
25
−
12
−
75
−
75
−
75
40 −
−
°C
−
V
−
Ω
−
Ω
−
Ω
860 MHz
−
100 −
mA
26 28
31
dB
−
1
−
dB
−
2.3 −
−
1.9 −
−
45
−
dB
−
35
−
dB
111 113 −
110 112 −
−
4.8 −
dBµV
dBµV
dB
−20 −
10.8 12
40 −
−
75
−
75
+70 °C
13.2 V
860 MHz
−
Ω
−
Ω
1995 Nov 14
4