NE57810 Datasheet, PDF (4/16 Pages) NXP Semiconductors – Advanced DDR memory termination power with external reference in

Philips Semiconductors
Advanced DDR memory termination power
with external reference in
Product data
NE57810
ELECTRICAL CHARACTERISTICS
T_amb = 0 °C to +75 °C, V_DD = 2.5 V; I_TT = –3.5 A to +3.5 A, unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V_TT
Output voltage
ExtRefIn not connected
–
V_DD/2
–
V
V_ACC
Output voltage accuracy (Note 5)
I_TT = 0 A, ExtRefIn not connected
–15
–
+15
mV
V_DD
Supply voltage
1.6
–
3.6
V
I_Q
Supply current
I_TT = 0 A
–
14
30
mA
I_TT
Output current
2.5 V ≤ V_DD ≤ 3.6 V
–3.5
–
+3.5
A
V_DD = 1.6 V
–2.5
–
+2.5
A
∆V_TT
Load regulation
I_TT = ±1.0 A
–
±6
–
mV
I_TT = ±3.5 A
–18
–
+18
mV
C_LOAD
Load capacitance (Note 2)
Stable operation
–
100
–
µF
External Reference In
V_TT
R_in(ExtRefIn)
Output voltage swing
Input impedance
Output voltage accuracy (Note 3)
Line regulation
Reference Out
I_TT = 0 A
ExtRefIn = 1.25 V;
V_DD = 2.25 – 3.6 V
0.8
–
V_DD – 0.8
V
35
50
–
kΩ
–15
–
+15
mV
–6
–
+6
mV
RefOut
Voltage reference out (Note 4)
IrefOut = 0 A; source or sink
–15
ExtRefIn
+15
mV
IrefOut
Reference Out current max
2.2
3
–
mA
C_LOAD
Load capacitance
Power Stage
Stable operation
0.1
–
–
µF
I_lim
Current limit
3.6
4.5
6.5
A
T_lim
Temperature shutdown
–
+150
–
°C
Temperature shutdown hysteresis
–
20
–
°C
NOTE:
1. Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlation using Statistical
Quality Control (SQC) methods.
2. Ceramic capacitors only. Low ESR electrolytic capacitors are not necessary.
3. Voltage Accuracy referred to voltage at ExtRefIn pin.
4. RefOut voltage referenced to ¹/₂ V_DD if ExtRefIn not connected.
5. V_ACC = V_TT – V_DD/2.
2003 Sep 12
4