MX0912B351Y Datasheet, PDF (4/12 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
MX0912B351Y
THERMAL CHARACTERISTICS
T_j = 125 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
R_{th j-mb}
R_{th mb-h}
Z_{th j-h}
thermal resistance from junction to mounting base CW
thermal resistance from mounting base to heatsink CW; note 1
thermal impedance from junction to heatsink
t_p = 10 µs; δ = 10%
notes 1 and 2
Notes
1. See “Mounting recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under nominal pulse microwave operating conditions.
MAX.
1.7
0.2
0.13
UNIT
K/W
K/W
K/W
CHARACTERISTICS
T_mb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_CES
collector cut-off current
I_EBO
emitter cut-off current
CONDITIONS
V_CB = 65 V; I_E = 0
V_CB = 50 V; I_E = 0
V_CE = 60 V; R_BE = 0 Ω
V_EB = 1.5 V; I_C = 0
MAX.
140
14
140
1.4
UNIT
mA
mA
mA
mA
APPLICATION INFORMATION
Microwave performance up to T_mb = 25 °C measured in the test circuit as shown in Fig.6 and working in class C
broadband in pulse mode; note 1.
MODE OF OPERATION
Class C;
t_p = 10 µs; δ = 10%
t_p = 300 µs; δ = 10%;
see Fig.5
f
(GHz)
0.960 to 1.215
1.03 to 1.09
V_CC
(V)⁽²⁾
50
50
P_L
(W)
>325
typ. 375
typ. 350
G_po
(dB)
>7
typ. 7.6
typ. 8
η_C
(%)
>40
typ. 47
typ. 48
Z_i/Z_L
(Ω)
see Figs 7 and 8
Notes
1. Operating conditions and performance for other pulse formats can be made available on request.
2. V_CC during pulse.
1997 Feb 19
4