MF1011B900Y Datasheet, PDF (4/12 Pages) NXP Semiconductors – Microwave power transistor

Philips Semiconductors
Microwave power transistor
Product specification
MF1011B900Y
THERMAL CHARACTERISTICS
SYMBOL
R_{th j-mb}
R_{th mb-h}
Z_th
PARAMETER
CONDITIONS
thermal resistance from junction to mounting base T_j = 120 °C
thermal resistance from mounting base to heatsink note 1
thermal impedance from junction to heatsink
t_p = 10 µs; δ = 1%;
notes 1and 2
Notes
1. See “Mounting recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under pulsed microwave operating conditions.
MAX.
0.84
0.2
0.01
UNIT
K/W
K/W
K/W
CHARACTERISTICS
T_mb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
I_CES
I_EBO
V_(BR)CBO
V_(BR)CES
collector cut-off current
collector cut-off current
emitter cut-off current
collector-base breakdown voltage
collector-emitter breakdown voltage
CONDITIONS
I_E = 0; V_CB = 50 V
V_BE = 0; V_CE = 50 V
I_C = 0; V_EB = 1.5 V
I_C = 180 mA
I_C = 180 mA; V_BE = 0
MAX.
27
27
7
65
65
UNIT
mA
mA
mA
V
V
APPLICATION INFORMATION
Microwave performance up to T_mb = 25 °C in a common-base test circuit as shown in Fig.3.
MODE OF
OPERATION
CONDITIONS
f
V_CC
P_L
G_p
(GHz)
(V)
(W)
(dB)
Class C
t_p = 10 µs; δ = 1%
t_p = 0.5 µs; δ = 50%
t_p = 112 µs; δ = 1%
t_p = 32 µs; δ = 1%
1.09
50
1.03 to 1.09
50
1.09
50
≥800
typ. 900
typ. 750
typ. 870
≥6
typ. 6.5
typ. 5.7
typ. 6.3
η_C
(%)
≥40
typ. 48
typ. 36
typ. 46
1997 Feb 18
4