LV2024E45R Datasheet, PDF (4/8 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
LV2024E45R
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-mb}
R_{th mb-h}
thermal resistance from junction to mounting-base T_j = 75 °C
thermal resistance from mounting-base to heatsink T_j = 75 °C; note 1
Note
1. See “Mounting recommendations in the General part of handbook SC15”.
MAX.
4
0.7
UNIT
K/W
K/W
CHARACTERISTICS
T_mb = 25 °C unless otherwise specified
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_CER
collector cut-off current
I_CEO
collector cut-off current
I_EBO
emitter cut-off current
h_FE
DC current gain
CONDITIONS
V_CB = 20 V; I_E = 0
V_CB = 40 V; I_E = 0
V_CE = 20 V; R_BE = 47 Ω
V_CE = 15 V; I_B = 0
V_EB = 1.5 V; I_C = 0
V_CE = 3 V; I_C = 1 A
MIN.
−
−
−
−
−
15
MAX.
0.5
2.5
25
2
100
100
UNIT
mA
mA
mA
mA
µA
APPLICATION INFORMATION
Microwave performance up to T_mb = 25 °C in a common emitter class-A wideband amplifier.
MODE OF OPERATION
f
(GHz)
V_CE
(V)
I_C
(A)
P_L1
(W)
G_po
(dB)
Class-A (CW)
2 to 2.4
16
1.1
≥4; typ. 5
≥6; typ. 7
Z_i; Z_L
(Ω)
see Fig 6
handbook, full pagewidth
input
VSWR <3
z0 = 50 Ω
20
2.25
8.8
16
2.25
output
VSWR <2
z0 = 50 Ω
7.5
4.5 5.5 4
MSA101
Dimensions in mm.
Striplines on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (ε_r = 2.55); thickness: 0.8 mm.
Fig.4 Wideband test circuit board.
1997 Feb 18
4