KM110B Datasheet, PDF (4/6 Pages) NXP Semiconductors – Magnetic field sensor

Philips Semiconductors
Magnetic field sensor
Notes to the characteristics
1. Magnet (Ferroxdure 100) delivers an auxiliary field of
H_x = 3.6 kA/m (temperature coefficient: −0.2 %/K).
Above 110 °C the auxiliary field H_x will be <3.0 kA/m;
stable sensor operation may be threatened by
disturbing magnetic fields.
2. S = --⁽--V----^O-------a---t----H-----^y----⁼------1---.--6---1---.-k-6--A---_×-/-m--V----⁾-_C---^–_C------⁽--V-----^O------a---t----H-----^y----⁼------0----⁾- .
3. The sensitivity increases and decreases linear with the
supply voltage, thus the static output voltage is directly
proportional to the supply voltage.
4. Sensor bridge response only. When sensing high
speed rotation, the operating frequency may be
reduced due to eddy current effects.
handbook, halfpagSe
Preliminary specification
KM110B/2
M
N
S
Hy
Hx
4 3 2 1 _MBD882
M = direction of magnetization.
N, S = magnetic poles.
Fig.3 Principle of magnetization.
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handbook, halfpage
VO
(mV/V)
4
MBD885
0
–4
–8
–2
–1
0
1
2
H _y (kA/m)
T_amb = 25 °C; V_offset = 0.
Fig.4 Sensor output characteristic.
November 1994
125
handbook, halfpage
Ptot
(mW)
100
75
50
25
0
0
50
MBD892
100
150
200
Tamb (^o C)
Fig.5 Power derating curve.
4