JA101 Datasheet, PDF (4/8 Pages) NXP Semiconductors – PNP general purpose transistor

Philips Semiconductors
PNP general purpose transistor
Product specification
JA101
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
V_BE
C_c
C_e
f_T
F
collector cut-off current
emitter cut-off current
DC current gain
JA101
I_E = 0; V_CB = −45 V
−
I_E = 0; V_CB = −45 V; T_j = 125 °C
−
I_C = 0; V_EB = −5 V
−
I_C = −1 mA; V_CE = −5 V
135
JA101P
135
JA101Q
200
JA101R
300
collector-emitter saturation voltage I_C = −10 mA; I_B = −0.5 mA
−
I_C = −100 mA; I_B = −5 mA
−
base-emitter saturation voltage I_C = −10 mA; I_B = −0.5 mA
−
I_C = −100 mA; I_B = −5 mA
−
base-emitter voltage
I_C = −2 mA; V_CE = −5 V
−550
collector capacitance
I_E = i_e = 0; V_CB = −10 V; f = 1 MHz
−
emitter capacitance
I_C = i_c = 0; V_EB = −0.5 V; f = 1 MHz −
transition frequency
I_C = −10 mA; V_CE = −5 V; f = 100 MHz 100
noise figure
I_C = −200 µA; V_CE = −5 V; R_S = 2 kΩ; −
f = 1 kHz; B = 200 Hz
−
−
−
−
−
−
−
−
−500
−700
−850
−
−
12
130
−
−15
−4
−100
600
270
400
600
−300
−
−
−
−700
6
−
−
10
nA
µA
nA
mV
mV
mV
mV
mV
pF
pF
MHz
dB
1998 Aug 04
4