BYD77 Datasheet, PDF (4/12 Pages) NXP Semiconductors – Ultra fast low-loss controlled avalanche rectifiers

Philips Semiconductors
Ultra fast low-loss
controlled avalanche rectifiers
Product specification
BYD77 series
SYMBOL
PARAMETER
C_d
diode capacitance
BYD77A to D
BYD77E to G
-d-d--I--t^R--
maximum slope of reverse recovery
current
BYD77A to D
BYD77E to G
CONDITIONS
f = 1 MHz; V_R = 0 V;
see Fig.15
when switched from
I_F = 1 A to V_R ≥ 30 V and
dI_F/dt = −1 A/µs;
see Fig.17
MIN.
−
−
−
−
TYP.
50
40
−
−
MAX. UNIT
− pF
− pF
4 A/µs
5 A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
R_{th j-tp}
R_{th j-a}
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
30
K/W
150
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.16.
For more information please refer to the “General Part of associated Handbook”.
1999 Nov 15
4