BYD53 Datasheet, PDF (4/12 Pages) NXP Semiconductors – Fast soft-recovery controlled avalanche rectifiers

Philips Semiconductors
Fast soft-recovery controlled
avalanche rectifiers
Product specification
BYD53 series
SYMBOL
PARAMETER
-d-d--I--t^R--
maximum slope of reverse
recovery current
BYD53D to J
BYD53K and M
BYD53U and V
CONDITIONS
when switched from I_F = 1 A to
V_R ≥ 30 V and dI_F/dt = −1 A/µs;
see Fig.19
MIN.
−
−
−
TYP. MAX. UNIT
−
7 A/µs
−
6 A/µs
−
5 A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
R_{th j-tp}
R_{th j-a}
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
60
K/W
120
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.17.
For more information please refer to the ‘General Part of associated Handbook’.
1998 Dec 04
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