BYC30W-600P_15 Datasheet, PDF (4/9 Pages) NXP Semiconductors – Hyperfast power diode

NXP Semiconductors
BYC30W-600P
Hyperfast power diode
9. Thermal characteristics
Table 6.
Symbol
R_th(j-mb)
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
with heatsink compound; Fig. 5
in free air
10
Z_th(j-mb)
(K/W)
1
Min Typ Max Unit
-
-
1
K/W
-
45
-
K/W
aaa-010284
10^-1
δ = 0.5
10^-2
δ = 0.3
δ = 0.1
δ = 0.05
10^-3
δ = 0.02
P
δ = ^tp
T
δ = 0.01
single pulse
10^-4
10^-6
10^-5
10^-4
10^-3
10^-2
10^-1
t_p
t
T
1
10
t_p (s)
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Static characteristics
V_F
forward voltage
I_R
reverse current
Dynamic characteristics
Q_r
recovered charge
Conditions
I_F = 30 A; T_j = 25 °C; Fig. 6
I_F = 30 A; T_j = 150 °C; Fig. 6
V_R = 600 V; T_j = 25 °C
V_R = 600 V; T_j = 150 °C
I_F = 30 A; V_R = 200 V; dI_F/dt = 200 A/
µs; T_j = 25 °C; Fig. 7
I_F = 30 A; V_R = 200 V; dI_F/dt = 200 A/
µs; T_j = 125 °C; Fig. 7
Min Typ Max Unit
-
2
2.75 V
-
1.38 1.8 V
-
-
10
µA
-
-
1
mA
-
50
-
nC
-
280 -
nC
BYC30W-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 February 2014
© NXP N.V. 2014. All rights reserved
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