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BYC10X-600_15 Datasheet, PDF (4/10 Pages) NXP Semiconductors – Rectifier diode, hyperfast
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NXP Semiconductors
7. Characteristics
Table 6. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
VF
forward voltage
IR
reverse current
Dynamic characteristics
IF = 10 A; Tj = 150 °C; see Figure 2
IF = 20 A; Tj = 150 °C; see Figure 2
IF = 10 A; see Figure 2
VR = 600 V
VR = 500 V; Tj = 100 °C
trr
reverse recovery time IF = 1 A to VR = 30 V; dIF/dt = 50 A/µs;
see Figure 3
IF = 10 A to VR = 400 V;
dIF/dt = 500 A/µs; see Figure 3
IF = 10 A to VR = 400 V;
dIF/dt = 500 A/µs; Tj = 100 °C;
see Figure 3
IRM
peak reverse recovery IF = 10 A to VR = 400 V;
current
dIF/dt = 50 A/µs; Tj = 125 °C;
see Figure 3
IF = 10 A to VR = 400 V;
dIF/dt = 500 A/µs; Tj = 100 °C;
see Figure 3
VFR
forward recovery
IF = 10 A; dIF/dt = 100 A/µs;
voltage
see Figure 4
BYC10X-600
Rectifier diode, hyperfast
Min
Typ
Max Unit
-
1.32 2.03 V
-
1.64 2.34 V
-
1.89 2.9
V
-
9
200
µA
-
1.1
3.0
mA
-
35
55
ns
-
19
-
ns
-
32
40
ns
-
3.0
7.5
A
-
9.5
12
A
-
8
11
V
BYC10X-600_2
Product data sheet
Rev. 02 — 16 January 2008
© NXP B.V. 2008. All rights reserved.
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