BY9300 Datasheet, PDF (4/12 Pages) NXP Semiconductors – Fast high-voltage soft-recovery controlled avalanche rectifiers

Philips Semiconductors
Fast high-voltage soft-recovery
controlled avalanche rectifiers
Product specification
BY9300 series
SYMBOL
PARAMETER
CONDITIONS
T_stg
storage temperature
T_j
junction temperature
BY9304
BY9306
BY9308
BY9310
BY9312
BY9314
BY9316
BY9318
Note
1. Withstands peak currents during flash-over in a picture tube.
MIN. MAX. UNIT
−65
+175 °C
−65
+160 °C
−65
+160 °C
−65
+155 °C
−65
+150 °C
−65
+145 °C
−65
+140 °C
−65
+140 °C
−65
+135 °C
ELECTRICAL CHARACTERISTICS
T_j = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
V_F
forward voltage
BY9304
BY9306
BY9308
BY9310
BY9312
BY9314
BY9316
BY9318
I_R
reverse current
Q_r
recovery charge
t_rr
reverse recovery time
C_d
diode capacitance
BY9304
BY9306
BY9308
BY9310
BY9312
BY9314
BY9316
BY9318
2000 Jan 10
CONDITIONS
TYP.
I_F = 10 mA
−
−
−
−
−
−
−
−
V_R = V_RRM1
−
V_R = V_RRM1; T_j = 120 °C
−
when switched from I_F = 100 mA 0.7
to V_R ≥ 100 V and
dI_F/dt = −200 mA/µs
when switched from I_F = 2 mA to −
I_R = 4 mA; measured at I_R = 1 mA
V_R = 0; f = 1 MHz
1.20
0.80
0.60
0.50
0.40
0.35
0.30
0.25
MAX. UNIT
10
V
14
V
20
V
24
V
30
V
34
V
40
V
44
V
1
µA
3
µA
−
nC
80
ns
−
pF
−
pF
−
pF
−
pF
−
pF
−
pF
−
pF
−
pF
4