BY8100 Datasheet, PDF(4/10 Page) NXP Semiconductors – Very fast high-voltage soft-recovery controlled avalanche rectifiers

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BY8100 Datasheet, PDF (4/10 Pages) NXP Semiconductors – Very fast high-voltage soft-recovery controlled avalanche rectifiers

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Philips Semiconductors

Very fast high-voltage soft-recovery

controlled avalanche rectiï¬ers

Product speciï¬cation

BY8100 series

ELECTRICAL CHARACTERISTICS

Tj = 25 Â°C; unless otherwise speciï¬ed.

SYMBOL

PARAMETER

CONDITIONS

forward voltage

BY8104

IF = 100 mA; Tj = Tj max;

see Figs 9 to 15

BY8106

BY8108

BY8110

BY8112

BY8114

BY8116

reverse current

recovery charge

VR = VRWmax; Tj = 120 Â°C

when switched from IF = 100 mA to

VR â¥ 100 V and dIF/dt = â200 mA/Âµs;

see Fig.16

fall time

when switched from IF = 100 mA to

VR â¥ 100 V and dIF/dt = â200 mA/Âµs;

see Fig.16

trr

reverse recovery time when switched from IF = 2 mA to

IR = 4 mA; measured at IR = 1 mA;

see Fig.17

diode capacitance

VR = 0 V; f = 1 MHz

BY8104

BY8106

BY8108

BY8110

BY8112

BY8114

BY8116

MIN.

TYP.

0.90

0.65

0.55

0.45

0.35

0.30

0.25

MAX. UNIT

26 V

36 V

44.5 V

54.5 V

75 V

82.5 V

94 V

3 ÂµA

0.4 nC

â ns

60 ns

â pF

1996 May 24

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