BUK9535-55A Datasheet, PDF (4/9 Pages) NXP Semiconductors – TrenchMOS transistor standard level FET

Philips Semiconductors
TrenchMOS transistor
Logic level FET
Product specification
BUK9535-55A
BUK9635-55A
100
ID/A 90
80
70
60
50
40
30
20
10
VGS/V =
10.0
7.5 _7.0
6.5
6.0
5.5
5.0
4.8
4.4
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
0
0
2
4
6
8
10
VDS/V
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
40 ^RDS(ON)/mOhm
35
VGS/V=
30
3.0
3.2
3.4
25
3.6
4.0
5.0
20
0
10
20
30
40
50
60
70
ID/A
Fig.6. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(V_GS); conditions: I_D = 25 A;
33 ^RDS(ON)/mOhm
32
31
30
29
28
27
26
25
24
23
22
3
4
5
6
7
8
9
10
ID/A
Fig.7. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(V_GS); conditions: I_D = 25 A;
70
ID/A
60
50
40
Tj/C= 175^oC
30
25^oC
20
10
0
0
1
2
3
4
5
6
7
VGS/V
Fig.8. Typical transfer characteristics.
I_D = f(V_GS) ; conditions: V_DS = 25 V; parameter T_j
25
gfs/S
20
15
10
5
0
0
5
10
15
20
25
30
35
ID/A
Fig.9. Typical transconductance, T_j = 25 ˚C.
g_fs = f(I_D); conditions: V_DS = 25 V
3a
Rds(on) normalised to 25degC
2.5
2
1.5
1
0.5
-100
-50
0
50
100
150
200
Tmb / degC
Fig.10. Normalised drain-source on-state resistance.
a = R_DS(ON)/R_{DS(ON)25 ˚C} = f(T_j); I_D = 25 A; V_GS = 5 V
February 2000
4
Rev 1.000