BUK854-800A Datasheet, PDF (4/7 Pages) NXP Semiconductors – Insulated Gate Bipolar Transistor IGBT

Philips Semiconductors
Insulated Gate Bipolar Transistor (IGBT)
Product Specification
BUK854-800A
gfe / S
8
BUK8Y4-800A
7
6
5
4
3
2
1
0
0
10
20
30
IC / A
Fig.7. Typical transconductance, T_j = 25 ˚C.
g_fe = f(I_C); conditions: V_CE = 15 V
VGE / V
16
BUK8Y4-800A
14
12
10
8
6
4
2
0
0
5
10
15
20
25
30
QG / nC
Fig.8. Typical turn-on gate-charge characteristics.
V_GE = f(Q_G); conditions: I_C = 6 A; V_CE = 500 V
t / ns
500
BUK8Y4-800A
400
300
200
tf
td(off)
100
0
0 20 40 60 80 100 120 140
Tj / C
Fig.9. Typical Switching Times vs. T_j
conditions: I_C = 6 A; V_CL = 500 V; R_G = 25 Ω
C / pF
1000
BUK854-800A
Cies
100
Coes
10
Cres
0
10
20
30
40
VDS / V
Fig.10. Typical capacitances, C_ies, C_oes, C_res.
C = f(V_CE); conditions: V_GE = 0 V; f = 1MHz.
dVCE/dt (V/ns)
12
BUK8Y4-800A
10
8
6
4
2
0
1
10
100
1000
Rg / Ohm
Fig.11. Typical turn-off dV_CE/dt vs. R_G
conditions: I_C = 6 A; V_CL = 500 V; T_j = 125 ˚C
E / mJ
0.7
BUK8Y4-800A
0.6
0.5
0.4
0.3 _E(on)
E(off)
0.2
0.1
0
0 20 40 60 80 100 120 140
Tj / C
Fig.12. Typical Switching losses vs. T_j
conditions: I_C = 6 A; V_CL = 500 V; R_G = 25 Ω
October 1994
4
Rev.1.100