BUK7635-55 Datasheet, PDF (4/8 Pages) NXP Semiconductors – TrenchMOS transistor Standard level FET

Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7635-55
100
16
ID/A
14
12
80
VGS/V =
10.0
9.5
9.0
8.5
60
8.0
7.5
40
7.0
6.5
20
6.0
5.5
5.0
0
4.5
0
2
4 _VDS/V 6
8
10 4.0
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
65 ^RD(ON)/mOhm
VGS/V =
6
60
55
6.5
7
50
45
8
40
9
35
10
30
25
0
Fig.6.
10
20
30 _ID/A 40
50
60
70
Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
70
ID/A
60
50
40
30
20
10
Tj/C = 175
25
0
0
2
4 _VGS/V 6
8
10
12
Fig.7. Typical transfer characteristics.
I_D = f(V_GS) ; conditions: V_DS = 25 V; parameter T_j
16
gfs/S
14
12
10
8
6
4
2
0
10
20
30 _ID/A 40
50
60
70
Fig.8. Typical transconductance, T_j = 25 ˚C.
g_fs = f(I_D); conditions: V_DS = 25 V
2.5 ^a
BUK959-60 _{Rds(on) normlised to 25degC}
2
1.5
1
0.5
-100
-50
0
50
100
150
200
Tmb / degC
Fig.9. Normalised drain-source on-state resistance.
a = R_DS(ON)/R_{DS(ON)25 ˚C} = f(T_j); I_D = 17 A; V_GS = 10 V
VGS(TO) / V
5
max.
4
typ.
3
min.
2
BUK759-60
1
0
-100
-50
0
50
Tj / C
100
150
200
Fig.10. Gate threshold voltage.
V_GS(TO) = f(T_j); conditions: I_D = 1 mA; V_DS = V_GS
April 1998
4
Rev 1.100